个人简介
吴丽娟，女，博士，教授。2005年于四川大学取得通信与信息系统的硕士学位。2012于电子科技大学取得微电子学与固体电子学的博士学位。2014年7月至今在长沙理工大学物理与电子科学学院工作。主持国家自然科学基金项目、湖南省自然科学基金面上项目、湖南省教育厅项目、横向项目等30余项。以第一作者发表A类期刊论文50余篇，SCI论文60余篇；出版国家“十三五”科学技术专著丛书1部；申请发明专利30余项。
主要研究领域
功率半导体器件与功率集成电路，集成电路设计与制造，微电子系统设计封装与测试。
教学情况
在本科生及研究生教育教学工作中系统开设了6门课程，包括本科生教学的 4门主干专业课，分别是《固体物理与半导体物理》、《半导体物理》、《微电子器件基础》、《微电子工艺学》，以及研究生教学的2门专业基础课：《半导体功率器件》、《集成电路工艺基础》。主持省级教改-重点项目，共培养硕士研究生60余人。教学注重渔鱼兼受，立德树人，牵头获校级研究生教育教学成果二等奖和研究生思政教学比赛三等奖，多次荣获优秀教师、优秀班主任、阳光园丁等荣誉。
代表性论文（只列近五年且为第一作者的论文）
(1)Lijuan Wu, Gengbin Zhu, et al. Novel 4H-SiC IGBT design for improved turn-on performance and dV/dt controllability based on space charge modulation, [J]. Microelectronics Journal, 2026, 167: 106974.
(2)Lijuan Wu * , Jiahong He, Zhipeng Shen, Gengbin Zhu, Qiqi Tang, Zongyang Yi, Guanglin Yang, Deqiang Yang, Simulation study of a 1200V 4H–SiC lateral MOSFETs with Double-RESURFs technology for reducing saturation current, Micro and Nanostructures ,2025, 208218:1-9
(3)Lijuan Wu*,Deqiang Yang et al. A novel 4H-SiC IGBT with double gate PMOS for improving the switch controllability and FBSOA [J]. Microelectronics Journal，2024，147：106187.
(4)Wu, Lijuan*, Guanglin Yang, Deqiang Yang, Zigui Tu, Jie Yuan, Dongsheng Zhao, Mengjiao Liu, and Jiahui Liang. Self-Clamped P-Shield 4H-SiC Trench MOSFET for Low Turn-off Loss and Suppress Switching Oscillation [J]. Microelectronics Journal，2024，151: 106307.
(5)Lijuan Wu*; Jiahui Liang; Mengyuan Zhang; Mengjiao Liu; Tengfei Zhang; Gang Yang; Xuanting Song ; An approach for extracting the SiC/SiO2 SiC MOSFET interface trap distribution and study during short circuit, Materials Science in Semiconductor Processing, 2023, 163: 107581- 107588.
(6)Lijuan Wu; Gang Yang; Mengjiao Liu; Jiahui Liang; Mengyuan Zhang; Tengfei Zhang ; Multidimensional accumulation gate LDMOS with ultra-low specific on-resistance, Microelectronics Journal, 2023, 138(1): 105860-105868.
(7)Lijuan Wu, Mengyuan Zhang, Jiahui Liang, Mengjiao Liu, Tengfei Zhangand Gang Yang.2023. "A Low-Loss 1.2 kV SiC MOSFET with Improved UIS Performance" Micromachines 14, no. 5: 1061. https://doi.org/10.3390/mi14051061.
(8)Lijuan Wu*, Mengjiao Liu, Mengyuan Zhang, et.al. Low On-State Voltage and EMI Noise 4H-SiC IGBT With Self-Biased Split-Gate pMOS. IEEE Transaction on Electron Device, 2023, 70(2): 647-652.
(9)Lijuan Wu*, Xuanting Song, Banghui Zhang, et.al. Novel Snapback-Free Shorted-Anode SOI-LIGBT With Shallow Oxide Trench and Adaptive Electron Channel. .IEEE Transaction on Electron Device 2023, 70(1): 185-190.
(10)Lijuan Wu*, Tao Qiu, Xuanting Song, et al. Analytical model for high-k SOI pLDMOS with self-adaptive balance of polarization charge. Microelectronics Journal, 2023, 132: 105677.
(11)Lijuan Wu*, Banghui Zhang, Gaoqiang Deng, et al. A Superjunction Insulated Gate Bipolar Transistor with Embedded Self-biased N-Type Metal–Oxide–Semiconductor Field-Effect Transistor. Journal of Electronic Materials, 2023: 1-8.
(12)Lijuan Wu*,Xing Chen, Jinsheng Zeng, et al. Novel Accumulation Mode Superjunction Device With Extended Superjunction Gate. IEEE Transaction on Electron Device, 2022,69(5):2560-2565.
(13)Lijuan Wu*,Jinsheng Zeng, et al. Analytical Model and Mechanism of a Linear Extended Gate for Lateral Internal Superjunction Power Devices. Silicon, 2022.
(14)Lijuan Wu*,Heng Liu, et al. 4H-SiC Trench IGBT with Controllable Hole-Extracting Path for Low Loss. Chinese PhySiCs B, 2022.
(15)Lijuan Wu*,Wu, H., Zeng, J. et al. A Novel LDMOS with Ultralow Specific on-Resistance and Improved Switching Performance. Silicon ,2021.
(16)Lijuan Wu*, Chen J , H Yang, et al. A Ultra-Low Specific On-Resistance and Extended Gate SJ LDMOS Structure. Transactions on Electrical and Electronic Materials, 2021(5).
(17)Lijuan Wu*, Ding Q , Chen J . Improved Deep Trench Super-junction LDMOS Breakdown Voltage By Shielded Silicon-Insulator-Silicon Capacitor. Silicon, 2020(3).
(18)Lijuan Wu*, Huang Y , Song Y , et al. Novel High-K SOI LDMOS with N + Buried Layer. IETE Technical Review, 2020:1-6.
(19)Lijuan Wu*, Zhu L, Chen X, Variable-K double trenches SOI LDMOS with high-concentration P-pillar. Chinese PhySiCs B, 2020, 29(5).
研究生就业去向
本课题组深耕微电子、半导体方向，兼顾科研创新与工程能力培养，历届毕业生就业渠道多元、平台优质。课题组毕业生就业方向覆盖国内半导体芯片、存储制造、轨道交通、科研机构与高等院校。毕业生多入职国内头部芯片与微电子企业，包含中芯国际、长鑫存储、长江存储、华虹宏力、华润微电子、景嘉微、三安半导体、楚微半导体、比亚迪半导体、京东方、飞腾信息等行业重点单位；部分学生进入株洲中车集团从事轨道交通相关研发；少量毕业生入职中国电科48所等科研院所，或前往湖南大学、湖南第一师范学院担任教职。
联系方式
E-mail: 305719669@qq.com
通讯地址：长沙理工大学(云塘校区)物理与电子科学学院理科楼B408
