2017
当前位置: 首页 >> 材料学科论文推介平台 >> 2017 >> 正文

Room-temperature deposition of flexible transparent conductive Ga-doped ZnO thin films by magnetron sputtering on polymer substrates

发布者:  发布时间:2018年10月23日 14:31

Journal of Materials Science: Materials in Electronics

April 2017, Volume 28,Issue 8, pp 6093–6098

Room-temperature deposition of flexible transparent conductive Ga-doped ZnO thin films by magnetron sputtering on polymer substrates

Li Gong,Yun-Zhen Liu,Fang-Yang Liu,Liang-Xing Jiang

Abstract

Flexible Ga doped ZnO transparent conductive films were prepared on polymer substrates at room temperature by RF magnetron sputtering. The effect of the Ar flow rate is more important than that of r.f. power and sputtering pressure. The dependence of the structural, electrical, optical and adhesive properties of flexible Ga doped ZnO transparent conductive thin films on the Ar flow rate was investigated for the first time. When the Ar flow rate is 40 sccm, the residual stress is changed from compressive stress to tensile stress, indicating the crystallinity of the film is best. And the lowest square resistance of 7.9 Ω/sq. is obtained at the Ar flow rate of 40 sccm. Regardless of the Ar flow rate, the optical transmittance in the visible light of all the films is about 90%. The best adhesive behavior is obtained at the Ar flow rate of 40 sccm.