◆个人简介

汤磊，1996年出生,男，博士。2019年6月毕业于长沙理工大学电气工程及其自动化专业卓越班，获学士学位；2024年12月硕博连读毕业于重庆大学，获电气工程博士学位。2025年1月入职长沙理工大学电气与信息工程学院。

◆主讲课程

暂无

◆研究方向

1.碳化硅功率半导体器件可靠性；2.碳化硅MOSFET在电力电子中的应用

◆论文专著

在IEEE Trans. Power Electronics、IEEE Electron Device Letter、IEEE Trans. Electron Devices等顶级期刊和WiPDA等会议上发表科研论文20余篇，其中一作或导师一作学生二作录用发表论文8篇，多篇论文被JEDEC国际标准引用。授权公开国家发明专利4件。

代表作

[1] L. Tang, H. Jiang, X. Zhong, Y. Huang, N. Xiao, K. Zhao and R. Liao, “Influence of Mismatched Gate Loop Inductance on Threshold Dispersity Evolution and Current Sharing of Parallel SiC MOSFETs,” IEEE Transactions on Power Electronics, vol. 40, no. 5, pp. 6921-6932, May 2025. (SCI1区，Top)

[2] L. Tang, H. Jiang, R. Liao, Y. Huang, X. Zhong, X. Qi, L. Liu and Q. Zhang, “Impact of the Threshold Dispersity Evolution on the Current Sharing of Parallel SiC MOSFETS,” IEEE Transactions on Power Electronics, vol. 39, no. 5, pp. 6312-6326, May 2024. (SCI1区，Top)

[3] L. Tang, H. Jiang, X. Zhong, G. Qiu, H. Mao, X. Jiang, X. Qi, C. Du, Q. Peng, L. Liu and L. Ran, “Investigation Into the Third Quadrant Characteristics of Silicon Carbide MOSFET,” IEEE Transactions on Power Electronics, vol. 38, no. 1, pp. 1155-1165, Jan. 2023. (SCI1区，Top)

[4] L. Tang, H. Jiang, R. Liao, X. Zhong, K. Zhao, N. Xiao and Y. Huang, “Analyzing the Changes in the Third Quadrant Characteristics of SiC MOSFET Induced by Threshold Drift,” IEEE Transactions on Electron Devices, vol. 71, no. 4, pp. 2342-2348, April 2024. (SCI2区)

[5] L. Tang, H. Jiang, J. Wei, Q. Hu, X. Zhong and X. Qi, “A comparative study of SiC MOSFETs with and without integrated SBD,” Microelectronics Journal, vol. 128, pp. 0026-2692, Oct. 2022. (SCI3区)

◆科研成果

作为主要研究人员参与国家重点研发计划课题1项，国网、南网科技项目2项，华为公司横向项目1项。