2017
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Study on the adhesive mechanism between the Ga doped ZnO thin film and the polycarbonate substrate

发布者:  发布时间:2018年10月23日 14:29

Materials Science in Semiconductor Processing

Volume 66, 1 August 2017, Pages 105-108

Study on the adhesive mechanism between the Ga doped ZnO thin film and the polycarbonate substrate

Li Gong,Yunzhen Liu,Liangxing Jiang,Fangyang Liu,

https://doi.org/10.1016/j.mssp.2017.04.003

Abstract

The Ga dopedZnO(GZO) film was deposited on thepolymersubstrate at room temperature bymagnetron sputtering. The resistivity is 8.9×10−4 Ω cm. The average transmittance in the visible region is over 85%. According to the resistivity and transmittance in the visible light, it is obtained that the film exhibits excellent electrical and optical properties, which satisfies the application for optoelectronic devices. However, the adhesion between the film and the polymer substrate is very weak. In order to figure out the reason of the weak adhesion, we study the adhesive mechanism between the GZO film and the polymer substrate through using depth profiling XPS method,residual stresstest, and SIMS method for the first time. The residual stress of the film is a compressive stress. According to the SIMS results, an element diffusion exists at the interface. However, according to the depth profiling XPS results, there is nochemical bondingbetween the GZO film and the polymer substrate.